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Auteur S. Stoyanov
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Faire une suggestion Affiner la rechercheVol. 29, n°10. Surface Diffusion Coefficients on Stranski-Krastanov Layers / Martin Zinke-Allmang
in Journal of applied physics
Titre : Surface Diffusion Coefficients on Stranski-Krastanov Layers Type de document : articles et extraits Auteurs : Martin Zinke-Allmang, Auteur ; S. Stoyanov, Auteur Année de publication : 1990 Langues : Anglais (eng) Mots-clés : surface diffusion, Stranski-Krastanov growth model, cluster growth, Ostwald ripening, cluster formation, Ge/Si(100), ion scattering, Scanning Auger microscopy Résumé : Quantitative surface diffusion coefficients in clustering systems are of crucial importance for thin film growth applications. In this letter we report the first determination of the activation energy for surface diffusion on the Stranski-Krastanov layer in a technological important heterosystem. The findings are based on previously published independent measurements of the activation energy for cluster growth and cluster formation from the free adatom concentration. For the Stranski-Krastanov layer thickness of Ge on Si(100) we obtain 3.08±0.16 monolayer equivalent coverage and for the activation energy of surface diffusion 0.84±0.14 eV.
in Journal of applied physics
Surface Diffusion Coefficients on Stranski-Krastanov Layers [articles et extraits] / Martin Zinke-Allmang, Auteur ; S. Stoyanov, Auteur . - 1990.
Langues : Anglais (eng)
Mots-clés : surface diffusion, Stranski-Krastanov growth model, cluster growth, Ostwald ripening, cluster formation, Ge/Si(100), ion scattering, Scanning Auger microscopy Résumé : Quantitative surface diffusion coefficients in clustering systems are of crucial importance for thin film growth applications. In this letter we report the first determination of the activation energy for surface diffusion on the Stranski-Krastanov layer in a technological important heterosystem. The findings are based on previously published independent measurements of the activation energy for cluster growth and cluster formation from the free adatom concentration. For the Stranski-Krastanov layer thickness of Ge on Si(100) we obtain 3.08±0.16 monolayer equivalent coverage and for the activation energy of surface diffusion 0.84±0.14 eV. Réservation
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Code-barres Cote Support Localisation Section Disponibilité ART-19901884 ZIN Document imprimé Bureau chercheur Bureau de Jean-Noël Aqua Disponible Japanese journal of applied physics. Part 1 Regular Papers, Brief Communications, Review Papers), Vol.30 No.1. Electromigration Induced Step Bunching on Si Surfaces – How Does it Depend on the Temperature and Heating Current Direction? / S. Stoyanov
in Japanese journal of applied physics / Physical society of Japan
Titre de série : Japanese journal of applied physics. Part 1 Regular Papers, Brief Communications, Review Papers), Vol.30 No.1 Titre : Electromigration Induced Step Bunching on Si Surfaces – How Does it Depend on the Temperature and Heating Current Direction? Type de document : articles et extraits Auteurs : S. Stoyanov, Auteur Année de publication : 1991 Importance : p.1-6 Langues : Français (fre) Résumé : Recently reported data for an influence of the heating current direction on the micromorphology of Si surfaces have been analyzed on the basis of the hypothesis for electromigration of Si adatoms. The results provide a reasonable explanation of the observed step bunching on the (111) Si surface, which occurs either at moderate or at high temperature depending on the direction (step up or step down) of the heating current. The confrontation with the experimental data results in a negative effective charge of the Si adatoms. The formation of major and minor domains on (001) Si vicinal surfaces under low temperature annealing is also interpreted in accordance with the obtained theoretical results. The force acting on the Si adatoms is estimated to be 0.8×10-16 N and can be created by an electric field of 5 V/cm if the effective charge of an adatom is equal to the elementary electric charge.
in Japanese journal of applied physics / Physical society of Japan
Japanese journal of applied physics. Part 1 Regular Papers, Brief Communications, Review Papers), Vol.30 No.1. Electromigration Induced Step Bunching on Si Surfaces – How Does it Depend on the Temperature and Heating Current Direction? [articles et extraits] / S. Stoyanov, Auteur . - 1991 . - p.1-6.
Langues : Français (fre)
Résumé : Recently reported data for an influence of the heating current direction on the micromorphology of Si surfaces have been analyzed on the basis of the hypothesis for electromigration of Si adatoms. The results provide a reasonable explanation of the observed step bunching on the (111) Si surface, which occurs either at moderate or at high temperature depending on the direction (step up or step down) of the heating current. The confrontation with the experimental data results in a negative effective charge of the Si adatoms. The formation of major and minor domains on (001) Si vicinal surfaces under low temperature annealing is also interpreted in accordance with the obtained theoretical results. The force acting on the Si adatoms is estimated to be 0.8×10-16 N and can be created by an electric field of 5 V/cm if the effective charge of an adatom is equal to the elementary electric charge.
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Code-barres Cote Support Localisation Section Disponibilité ART-9525-0 ART Document imprimé Bureau chercheur Bureau de FRISCH Thomas Disponible Japanese journal of applied physics. Part 1 Regular Papers, Brief Communications, Review Papers), Vol.32 No.5A. High-Temperature MBE Growth of Si-Direct Current Heating Effects on (111) and (001) Vicinal Surfaces / S. Stoyanov
in Japanese journal of applied physics / Physical society of Japan
Titre de série : Japanese journal of applied physics. Part 1 Regular Papers, Brief Communications, Review Papers), Vol.32 No.5A Titre : High-Temperature MBE Growth of Si-Direct Current Heating Effects on (111) and (001) Vicinal Surfaces Type de document : articles et extraits Auteurs : S. Stoyanov, Auteur ; T. Doi, Auteur ; M. Ichikawa, Auteur Année de publication : 1993 Importance : p.2047-2051 Langues : Français (fre) Résumé : The molecular beam epitaxial (MBE) growth model is extended to account for the electromigration of Si adatoms on both (001) and (111) Si surfaces. Step bunching is predicted to occur at the (111) surface when the heating current has step-down direction. Electromigration-induced formation of a major reconstruction domain at (001) Si is not expected when the growth process is controlled by step kinetics. When the process is controlled by surface transport, the vicinal surface is predicted to be dominated by either the 1×2 or 2×1 domain depending on the direction of the current. Microprobe reflection high-energy electron diffraction (µ-RHEED) observations of MBE growth of the (001) Si surface at temperatures of 750-900°C reveal preferential growth of the SA steps when the heating dc has a step-up direction. This is in contrast with the reported preferential growth of SB steps at lower temperatures (400-600°C). The difference in the surface reconstruction is interpreted to indicate a transition from step-kinetics-controlled growth (at 400-600°C) to surface-diffusion-controlled growth (at 750-900°C).
in Japanese journal of applied physics / Physical society of Japan
Japanese journal of applied physics. Part 1 Regular Papers, Brief Communications, Review Papers), Vol.32 No.5A. High-Temperature MBE Growth of Si-Direct Current Heating Effects on (111) and (001) Vicinal Surfaces [articles et extraits] / S. Stoyanov, Auteur ; T. Doi, Auteur ; M. Ichikawa, Auteur . - 1993 . - p.2047-2051.
Langues : Français (fre)
Résumé : The molecular beam epitaxial (MBE) growth model is extended to account for the electromigration of Si adatoms on both (001) and (111) Si surfaces. Step bunching is predicted to occur at the (111) surface when the heating current has step-down direction. Electromigration-induced formation of a major reconstruction domain at (001) Si is not expected when the growth process is controlled by step kinetics. When the process is controlled by surface transport, the vicinal surface is predicted to be dominated by either the 1×2 or 2×1 domain depending on the direction of the current. Microprobe reflection high-energy electron diffraction (µ-RHEED) observations of MBE growth of the (001) Si surface at temperatures of 750-900°C reveal preferential growth of the SA steps when the heating dc has a step-up direction. This is in contrast with the reported preferential growth of SB steps at lower temperatures (400-600°C). The difference in the surface reconstruction is interpreted to indicate a transition from step-kinetics-controlled growth (at 400-600°C) to surface-diffusion-controlled growth (at 750-900°C).
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Code-barres Cote Support Localisation Section Disponibilité ART-9527-0 ART Document imprimé Bureau chercheur Bureau de FRISCH Thomas Disponible